Method for increasing a very-large-scale-integrated (VLSI) capacitor size on bulk silicon and silicon-on-insulator (SOI) wafers and structure formed thereby

摘要

A method of forming a semiconductor device, includes forming at least one conductive island having a predetermined sidewall angle in a conductive substrate, forming a dielectric material over the at least one island, forming a conductive material over the dielectric material, and forming a contact to the conductive material and the at least one island.