发明名称 |
Copper back-end-of-line by electropolish |
摘要 |
A method of fabricating a planarized metal structure comprising the following steps. A structure is provided. A patterned dielectric layer is formed over the structure. The patterned dielectric layer having an opening formed therein and exposing at least a portion of the structure. A first-metal layer is formed over the patterned dielectric layer filling the opening. The first-metal layer including at least a doped metal portion adjacent the patterned dielectric layer. The doped metal portion being doped with a second-metal. The structure is annealed to form a second-metal oxide layer adjacent the patterned dielectric layer. The first-metal layer and the second-metal oxide layer are planarized using only a electropolishing process to remove the excess of the first-metal layer and the second-metal oxide layer from over the patterned dielectric layer and leaving a planarized metal structure within the opening.
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申请公布号 |
US6649513(B1) |
申请公布日期 |
2003.11.18 |
申请号 |
US20020146286 |
申请日期 |
2002.05.15 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY |
发明人 |
TSAI MING-HSING;CHOU SHIH-WEI;SHUE WINSTON;LIANG MONG-SONG |
分类号 |
H01L21/321;H01L21/3213;H01L21/768;(IPC1-7):H01L21/476;H05K3/07 |
主分类号 |
H01L21/321 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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