THIN-FILM TRANSISTOR AND DISPLAY DEVICE USING THE SAME

摘要

PROBLEM TO BE SOLVED: To increase the operation speed of a thin-film transistor mainly composed of polycystalline silicon, and to provide a display device provided with the thin-film transistor.

SOLUTION: Insulating films that constitute the thin-film transistor are obtained by heating coated films each mainly composed of a Hydrogen Silsesquioxane compound or a Methyl Silsesquioxane compound. The dielectric constant of the insulating film is lowered by distributing empty holes whose diameters are mainly 4 nm or smaller in the insulating film. As a consequence, the operation speed of the thinfilm transistor increases.

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