SEMICONDUCTOR CAPACITY ELEMENT AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To prevent the increase of the number of manufacturing processes while restraining the generation of a parasitic capacity in a constitution using embedding wiring formed inside a layer insulation film as an electrode. SOLUTION: The semiconductor capacity element 10 has a capacity insulation film 13 constituted of an etching stopper film 8 which is formed only in a region held between a via plug 17B functioning as an upper electrode and a lower electrode 6B. The capacity insulation film 13 is not formed outside the opposed surfaces. COPYRIGHT: (C)2004,JPO