STRUCTURE AND MANUFACTURING METHOD OF PAIR OF SINGLE AND DOUBLE EPROM, AND PROGRAMING METHOD AND READING METHOD OF MEMORY CELL THEREFOR

摘要

PROBLEM TO BE SOLVED: To provide single and double EPROMs and a manufacturing method therefor. SOLUTION: Cell structures of the single and double EPROMs are each provided with a separation region arranged on a base plate while the separation region defines a stripe-shape active region. A first conductive type deep well is arranged in the separation region at a place below the stripe-shape active region. A gate oxide layer is arranged on the stripe-shape active region. A pair of selection gates are arranged on the gate oxide layer and the separation region while the pair of selection gates are provided with shapes of stripes and are orthogonal to the stripe-shape active region. A pair of stray gates are arranged on the gate oxide layer opposed to the stripe-shape active region while a gap is formed between the pair of selection gates. A second conductive well is arranged in the first conductive deep well and is positioned below the pair of stray gates and the pair of selection gates. A pair of sources are arranged at both sides of the second conductive well while the pair of sources are connected to each other by the first conductive type deep well. COPYRIGHT: (C)2004,JPO