发明名称 Bridge circuit for controlling inductive load using MOSFETs has at least one transistor of each series transistor pair provided with floating or high ohmic body zone
摘要 The bridge circuit has 4 MOSFETs (T1,T2,T3,T4) connected in respective bridge arms for providing 2 series transistor pairs across the supply voltage terminals (EK1,EK2), with the load terminals (AK1,AK2) provided by the intermediate nodes between the series transistors of each pair. At least one transistor of each pair has a floating or high ohmic body zone, with a diode (D1,D2,D3,D4) connected between its source (S) and gate (G) terminals.
申请公布号 DE10227832(C1) 申请公布日期 2003.11.13
申请号 DE20021027832 申请日期 2002.06.21
申请人 INFINEON TECHNOLOGIES AG 发明人 TIHANYI, JENOE
分类号 H02M3/337;H03K17/0814;H03K17/687;(IPC1-7):H03K17/082;H02M1/00;H02M7/538 主分类号 H02M3/337
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