发明名称 |
Dielectric material and process of insulating a semiconductor device using same |
摘要 |
A dielectric material formed by contacting a low dielectric constant polymer with liquid or supercritical carbon dioxide, under thermodynamic conditions which maintain the carbon dioxide in the liquid or supercritical state, wherein a porous product is formed. Thereupon, thermodynamic conditions are changed to ambient wherein carbon dioxide escapes from the pores and is replaced with air.
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申请公布号 |
US2003211312(A1) |
申请公布日期 |
2003.11.13 |
申请号 |
US20030456299 |
申请日期 |
2003.06.06 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
COTTE JOHN M.;MCCULLOUGH KENNETH JOHN;MOREAU WAYNE MARTIN;PETRARCA KEVIN;SIMONS JOHN P.;TAFT CHARLES J.;VOLANT RICHARD |
分类号 |
H01B3/30;H01L21/3105;H01L21/312;H01L21/316;(IPC1-7):B32B3/26 |
主分类号 |
H01B3/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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