发明名称 Dielectric material and process of insulating a semiconductor device using same
摘要 A dielectric material formed by contacting a low dielectric constant polymer with liquid or supercritical carbon dioxide, under thermodynamic conditions which maintain the carbon dioxide in the liquid or supercritical state, wherein a porous product is formed. Thereupon, thermodynamic conditions are changed to ambient wherein carbon dioxide escapes from the pores and is replaced with air.
申请公布号 US2003211312(A1) 申请公布日期 2003.11.13
申请号 US20030456299 申请日期 2003.06.06
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 COTTE JOHN M.;MCCULLOUGH KENNETH JOHN;MOREAU WAYNE MARTIN;PETRARCA KEVIN;SIMONS JOHN P.;TAFT CHARLES J.;VOLANT RICHARD
分类号 H01B3/30;H01L21/3105;H01L21/312;H01L21/316;(IPC1-7):B32B3/26 主分类号 H01B3/30
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