发明名称 |
Magnetic storage apparatus having dummy magnetoresistive effect element and manufacturing method thereof |
摘要 |
A magnetic memory device includes a memory cell portion, a peripheral circuit portion positioned in the vicinity of the memory cell portion, a plurality of first magnetoresistive effect elements which are arranged in the memory cell portion and function as memory elements, and a plurality of second magnetoresistive effect elements which are arranged in at least a part of the peripheral circuit portion and function as dummies, wherein a sum total of occupying areas of the second magnetoresistive effect elements is 5% to 80% of the peripheral circuit portion.
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申请公布号 |
US2003210586(A1) |
申请公布日期 |
2003.11.13 |
申请号 |
US20030406387 |
申请日期 |
2003.04.04 |
申请人 |
NAKAJIMA KENTARO;AMANO MINORU |
发明人 |
NAKAJIMA KENTARO;AMANO MINORU |
分类号 |
H01L27/105;G11C7/00;G11C11/15;G11C11/16;H01L21/00;H01L21/8246;H01L27/22;H01L29/76;H01L43/08;(IPC1-7):G11C7/00 |
主分类号 |
H01L27/105 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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