发明名称 |
Method of alignment for buried structures formed by surface transformation of empty spaces in solid state materials |
摘要 |
A method of aligning a plurality of empty-spaced buried patterns formed in semiconductor monocrystalline substrates is disclosed. In an exemplary embodiment, high-temperature metal marks are formed to include a conductive material having a melting temperature higher than an annealing temperature used to form such empty-spaced buried patterns. The high-temperature metal marks are formed prior to the formation of the empty-spaced buried patterns formed in a monocrystalline substrate, so that the empty-space buried patterns are aligned to the marks. Subsequent semiconductor structures that are formed as part of desired semiconductor devices can be also aligned to the marks.
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申请公布号 |
US2003209814(A1) |
申请公布日期 |
2003.11.13 |
申请号 |
US20030419809 |
申请日期 |
2003.04.22 |
申请人 |
FARRAR PAUL A.;GEUSIC JOSEPH E. |
发明人 |
FARRAR PAUL A.;GEUSIC JOSEPH E. |
分类号 |
G03F9/00;H01L21/764;H01L23/544;(IPC1-7):H01L21/76;H01L23/48 |
主分类号 |
G03F9/00 |
代理机构 |
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