发明名称 BIAS CIRCUIT OF MMIC DIE CHIP FOR RF POWER AMPLIFIER
摘要 PURPOSE: A bias circuit of an MMIC die chip for RF power amplifier is provided to supply the constant current to the inside of the MMIC die chip and reduce a variation of characteristic due to a variation of temperature by forming the bias circuit of the MMIC die chip with a differential amplifier circuit. CONSTITUTION: A bias circuit of an MMIC die chip for RF power amplifier includes a driver amplifier, an interstage match, and a power amplifier. The bias circuit is formed with a differential amplifier circuit. The differential amplifier circuit is formed with two transistors of the same characteristic having emitters connected to each other. The constant current is obtained and the variation of characteristic due to the variation of temperature is reduced by the differential amplifier circuit including two transistors of the same characteristic.
申请公布号 KR20030087089(A) 申请公布日期 2003.11.13
申请号 KR20020024645 申请日期 2002.05.06
申请人 LG INNOTEC CO., LTD. 发明人 SUN, YUN SIK
分类号 H03F3/20;(IPC1-7):H03F3/20 主分类号 H03F3/20
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