| 摘要 |
<p>The power switch has a field effect transistor (FET) with: - an active area in a semiconductor body, - a channel formed in the active area, - a source diffusion zone and a drain diffusion zone alternating with each other in the active area, a source diffusion zone being separated from a drain diffusion zone by the channel. Each source diffusion zone has a sourcecontact and each drain diffusion zone has a drain contact. A gate is electrically insulated from the channel, said gate having a length and a width. The distance between a source contact and the gate is substantially the same as the distance between the draincontact and the gate, the drain contact being translated relative to the source contact over a distance in the direction of the width of the gate, current paths between the source contact and the drain contact having substantially the same series resistance. Due to the series resistance, the power switch is robust to high ESD voltages. The ESD-robust power switch has the advantage of being very compact.</p> |
