发明名称 |
SEMICONDUCTOR DEVICE AND ITS PRODUCTION METHOD |
摘要 |
<p>On an Si substrate 1, a buffer layer 2, a SiGe layer 3, and an Si cap layer 4 are formed. A mask is formed on the substrate, and then the substrate is patterned. In this manner, a trench 7a is formed so as to reach the Si substrate 1 and have the side faces of the SiGe layer 3 exposed. Then, the surface of the trench 7a is subjected to heat treatment for one hour at 750 DEG C so that Ge contained in a surface portion of the SiGe layer 3 is evaporated. Thus, a Ge evaporated portion 8 having a lower Ge content than that of other part of the SiGe layer 3 is formed in part of the SiGe layer 3 exposed at part of the trench 7a. Thereafter, the walls of the trench 7a are oxidized. <IMAGE></p> |
申请公布号 |
EP1361607(A1) |
申请公布日期 |
2003.11.12 |
申请号 |
EP20030701053 |
申请日期 |
2003.01.09 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
HARA, YOSHIHIRO;ASAI, AKIRA;SUGAHARA, GAKU;SORADA, HARUYUKI;OHNISHI, TERUHITO |
分类号 |
H01L21/762;H01L21/8234;H01L29/10;(IPC1-7):H01L21/762 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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