发明名称 |
MOSFET having a double gate |
摘要 |
A double gate MOSFET. The MOSFET includes a bottom gate electrode and a bottom gate dielectric disposed over the bottom gate electrode. A semiconductor body region is disposed over the bottom gate dielectric and the bottom gate electrode, and disposed between a source and a drain. A top gate electrode is disposed over the body. A top gate dielectric separates the top gate electrode and the body, the top gate electrode and the bottom gate electrode defining a channel within the body and interposed between the source and the drain. At least one of the bottom gate dielectric or the top gate dielectric is formed from a high-K material. A method of forming a double gate MOSFET is also disclosed where a semiconductor film used to form a body is recrystallized using a semiconductor substrate as a seed crystal.
|
申请公布号 |
US6646307(B1) |
申请公布日期 |
2003.11.11 |
申请号 |
US20020081362 |
申请日期 |
2002.02.21 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
YU BIN;PATON ERIC N. |
分类号 |
H01L21/336;H01L29/786;(IPC1-7):H01L27/01;H01L27/12;H01L31/039 |
主分类号 |
H01L21/336 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|