| 摘要 |
A semiconductor integrated circuit has a MOS transistor formed on an SOI substrate and a subsidiary transistor provided between a body node and a drain node of the MOS transistor and sharing a gate electrode with the MOS transistor, whereby the body potential of the MOS transistor is controlled by gate and drain potentials. Accumulated body charge in a non-conducting state in the semiconductor integrated circuit is extracted by a resistor formed between the body node and a source, whereby various phenomena caused by the floating body effect are eliminated. The threshold voltage of the MOS transistor can be made variable so as to follow a change in an input signal.
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