| 摘要 |
An evanescently coupled photodiode of the invention has a semiconductor substrate 1, a guide layer 3 being greater in refractive index than the semiconductor substrate, and an absorption layer 4 on a partial area of said guide layer formed in it. The mesa width of a PD region in which the absorption layer and the guide layer are formed is made wider at a part where the density of a photoelectric current is higher when the photodiode operates and more narrow at a part where the density of a photoelectric current is lower.
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