| 摘要 |
PURPOSE: A method for forming a barrier metal of a semiconductor device is provided to be capable of increasing the density of a TiON layer. CONSTITUTION: An insulating layer(3) is formed on a silicon substrate(1). At this time, a junction(2) is formed in the silicon substrate. A contact hole(4) is formed by selectively etching the insulating layer for exposing the junction. A cleaning process is performed on the resultant structure for removing a native oxide layer(6) grown on the exposed junction. A Ti layer is formed on the entire surface of the resultant structure. A TiON layer is formed on the Ti layer. A heat treatment is performed on the resultant structure under mixed gas atmosphere. At this time, the mixed gas contains oxygen and nitrogen.
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