SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device which has a practical dielectric strength characteristic and a method for manufacturing the same. SOLUTION: The method for manufacturing the semiconductor device includes a process of forming a high-density impurity-doped layer 2 containing impurities of the same conductivity type with a substrate 1 made of SiC to higher density than the substrate 1 and a process of forming an epitaxial growth layer 3 of SiC containing impurities of the same conductivity type with the high-density impurity-doped layer 2 on the high-density impurity-doped layer 2. By this method, the semiconductor device is obtained which has the dielectric strength characteristic improved and its power loss suppressed. COPYRIGHT: (C)2004,JPO