发明名称 METHOD OF BONDING FILM-LIKE DIE BONDING MATERIAL OF DICED WAFER
摘要 PROBLEM TO BE SOLVED: To solve such a problem that large chipping is caused at the time of dicing in a method of bonding and dicing film-like die bonding materials to the back side of a conventional back-ground and thinned wafer. SOLUTION: In a film-like die bonding material 3, notches 5 are previously put at equal intervals at a pitch of 50μm, for example. Then, a wafer is set in a chip mounter, and a chip is lifted by a pick up head 6. The film-like die bonding material 3 is cut into approximately the same size as the chip from the notches 5 at the equal intervals to perform chip mounting through thermocompression bonding. The voids due to the notches in the interface between the back side of the chip and the film-like die bonding material can be crushed by the heat and load after mounting, if the thermoplastic film-like die bonding material is used. COPYRIGHT: (C)2004,JPO
申请公布号 JP2003318205(A) 申请公布日期 2003.11.07
申请号 JP20020121137 申请日期 2002.04.23
申请人 NEC ELECTRONICS CORP 发明人 TEZUKA TAKASHI
分类号 H01L21/52;H01L21/301;(IPC1-7):H01L21/52 主分类号 H01L21/52
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