| 摘要 |
PURPOSE: A mask for estimating aberration in a projection lens system of an exposure apparatus is provided to be capable of reducing the fabrication cost of the mask by simply modifying the structure of the mask pattern. CONSTITUTION: A mask for estimating aberration in a projection lens system of an exposure apparatus is provided with a mask substrate and a plurality of mask patterns(101) regularly arrayed at the upper portion of the mask substrate. At this time, the critical dimension and phase of each mask pattern are decided in proportion to the SINC function. Preferably, the distance between center portions of each mask pattern, is equalized. Preferably, the phase of each mask pattern is controlled by etching the mask substrate. |
