发明名称 |
MEMORY CELL TRANSISTOR OF DRAM DEVICE HAVING SOURCE/DRAIN JUNCTION REGION OF DIFFERENT JUNCTION PROFILE CONNECTED TO DC NODE AND BC NODE, AND MANUFACTURING METHOD THEREOF |
摘要 |
PURPOSE: A memory cell transistor of a DRAM(Dynamic Random Access Memory) device having source/drain junction region of different junction profile connected to DC node and BC node, and manufacturing method thereof are provided to be capable of improving static and dynamic refresh characteristics. CONSTITUTION: A memory cell transistor is provided with a gate stack pattern(60) formed at the upper portion of a semiconductor substrate(50), a DC and BC node formed at both sides of the gate stack pattern on the surface of the semiconductor substrate for being electrically connected with a bit line and a capacitor storage node, and a source/drain region(72a,72b) having a different junction profile, formed in the semiconductor substrate.
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申请公布号 |
KR20030085897(A) |
申请公布日期 |
2003.11.07 |
申请号 |
KR20020024198 |
申请日期 |
2002.05.02 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
AHN, SU JIN |
分类号 |
H01L27/108;H01L21/336;H01L21/8242;H01L29/78;(IPC1-7):H01L27/108 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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