发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device having a fuse structure wherein an occupied area of fuses can be reduced and effective fuse cutting is enabled, regarding a semiconductor device having a fuse structure for rescuing a circuit. SOLUTION: Upper layer fuses 1, 2, and 3 arranged on a (n+1)th layer and lower layer fuses 4, 5, and 6 arranged on an n-th layer sandwich interlayer insulating films 18. The upper layer fuses 1, 2, and 3 are formed of aluminum or the like and arranged in a Y direction. The lower layer fuses 4, 5, and 6 are formed of copper or the like and arranged in an X direction. When only one fuse is cut, fuse blow is performed between intersections 7-15. When the intersections 7-15 of fuses of the upper layer and the lower layer are irradiated with laser light, two fuses different in direction can be cut by one time fuse blow. COPYRIGHT: (C)2004,JPO
申请公布号 JP2003318259(A) 申请公布日期 2003.11.07
申请号 JP20020116905 申请日期 2002.04.19
申请人 MITSUBISHI ELECTRIC CORP 发明人 KATO HISAYUKI
分类号 H01L23/52;H01L21/3205;H01L21/82;(IPC1-7):H01L21/82;H01L21/320 主分类号 H01L23/52
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