| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide the capacitor of a semiconductor element capable of obtaining a larger charging capacity by using a dual dielectric film compared with an already existing dielectric substance and a method for manufacturing it. <P>SOLUTION: This method for manufacturing the capacitor of a semiconductor element comprises a step for forming a lower electrode 33 on a semiconductor substrate 21, a step for forming a dielectric film configured of a dual dielectric film formed of an Al<SB>2</SB>O<SB>3</SB>thin film 37a and a Ta<SB>2</SB>O<SB>5</SB>thin film 37b on the lower electrode, and a step for forming an upper electrode 39 on the dielectric film. <P>COPYRIGHT: (C)2004,JPO |
