STORAGE DEVICE USING RESISTANCE CHANGE STORAGE ELEMENT AND METHOD FOR DETERMINING REFERENCE RESISTANCE VALUE OF THE DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a storage device capable of correctly reading data stored in a resistance change storage element.

SOLUTION: In this storage device using the resistance change storage element that changes to a high resistance state in which its resistance value is higher than the resistance value of a reference resistance element and to a low resistance state in which its resistance value is lower than the resistance value of the reference resistance element in accordance with two types of stored data, a reference circuit configured by connecting a resistance element and the reference resistance element in series and a storage circuit configured by connecting a resistance element and the resistance change storage element in series are connected in parallel between reference potential terminals set to two different potentials, and the reference resistance element is configured to be able to change its resistance value.

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