| 摘要 |
PURPOSE: A TFT LCD and a method for fabricating the same are provided to improve the operation speed of TFTs by using a micro crystal silicon as an active layer, thereby preventing the after-image and improving the screen quality. CONSTITUTION: A TFT LCD includes a semiconductor layer(35b') having amorphous silicon layers(35a) formed at upper and lower parts of a micro crystal amorphous silicon layer(35a'). The micro crystal amorphous silicon layer has an irregular distribution of crystal, so that the off characteristics of TFTs become deteriorated even though the operation speed of the TFTs is improved when the crystal exists on an interface between the micro crystal silicon and a gate insulating film(33) and electrons are trapped via the interface. The amorphous silicon layers formed at both sides of the micro crystal silicon resolve the problems generated from the interface. |
