Self-aligned SiGe HBT on a SOI substrate

摘要

A SiGe HBT BiCMOS on a SOI substrate includes a self-aligned base/emitter junction to optimize the speed of the HBT device. The disclosed SiGe BiCMOS/SOI device has a higher performance than a SiGe BiCMOS device on a bulk substrate. The disclosed device and method of fabricating the same also retains the high performance of a SiGe HBT and the low power, high-speed properties of a SOI CMOS. In addition, the disclosed method of fabricating a self-aligned base/emitter junction provides a HBT transistor having an improved frequency response.