发明名称 |
Trench DMOS transistor with embedded trench schottky rectifier |
摘要 |
An integrated circuit having a plurality of trench Schottky barrier rectifiers within one or more rectifier regions and a plurality of trench DMOS transistors within one or more transistor regions. The integrated circuit comprises: (a) a substrate of a first conductivity type; (b) an epitaxial layer of the first conductivity type over the substrate, wherein the epitaxial layer has a lower doping level than the substrate; (c) a plurality of body regions of a second conductivity type within the epitaxial layer in the transistor regions; (d) a plurality of trenches within the epitaxial layer in both the transistor regions and the rectifier regions; (e) a first insulating layer that lines the trenches; (f) a polysilicon conductor within the trenches and overlying the first insulating layer; (g) a plurality of source regions of the first conductivity type within the body regions at a location adjacent to the trenches; (h) a second insulating layer over the doped polysilicon layer in the transistor regions; and (i) an electrode layer over both the transistor regions and the rectifier regions.
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申请公布号 |
US2003207538(A1) |
申请公布日期 |
2003.11.06 |
申请号 |
US20030448791 |
申请日期 |
2003.05.30 |
申请人 |
HSHIEH FWU-IUAN;TSUI YAN MAN;CHONG SO KOON |
发明人 |
HSHIEH FWU-IUAN;TSUI YAN MAN;CHONG SO KOON |
分类号 |
H01L29/872;H01L21/336;H01L21/8234;H01L27/04;H01L27/06;H01L29/417;H01L29/47;H01L29/78;(IPC1-7):H01L21/336 |
主分类号 |
H01L29/872 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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