| 发明名称 |
Forming electronic structures having dual dielectric thicknesses and the structure so formed |
| 摘要 |
A structure including a first device and a second device, wherein the second device has a dielectric thickness greater than the dielectric thickness of the first device, and the method of so forming the structure.
|
| 申请公布号 |
US2003207533(A1) |
申请公布日期 |
2003.11.06 |
| 申请号 |
US20030411850 |
申请日期 |
2003.04.10 |
| 申请人 |
HSU LOUIS L.;MANDELMAN JACK A.;RADENS CARL J.;STRUB RICHARD A.;TONTI WILLIAM R. |
发明人 |
HSU LOUIS L.;MANDELMAN JACK A.;RADENS CARL J.;STRUB RICHARD A.;TONTI WILLIAM R. |
| 分类号 |
H01L21/8239;H01L21/334;H01L21/8234;H01L21/8242;H01L29/94;(IPC1-7):H01L21/824 |
主分类号 |
H01L21/8239 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
