发明名称 PRODUCTION METHOD OF THIN FILM TRANSISTOR MATRIX DEVICE AND PRODUCTION METHOD OF LIQUID CRYSTAL DISPLAY DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a production method of a TFT matrix type liquid crystal display device which prevents the irregularities of display on a screen caused when one total pattern which is regularly arranged by connecting the patterns by the use of plural sheets of exposure masks is formed. <P>SOLUTION: A resist film is formed on a film on a substrate having a first region, a second region and a third region placed between the first region and the second region, the film is patterned by the use of photolithography using a first exposure mask and a second exposure mask and the total patterned film is formed in such a manner that the boundary line between the patterned film relating to the first exposure mask and the patterned film relating to the second exposure mask is made rugged. Such a process above mentioned is applied at least for two different films and, thereby, at least two different layers 12, 20a and 20b are formed. <P>COPYRIGHT: (C)2004,JPO</p>
申请公布号 JP2003315831(A) 申请公布日期 2003.11.06
申请号 JP20030046342 申请日期 2003.02.24
申请人 FUJITSU DISPLAY TECHNOLOGIES CORP 发明人 TAKIZAWA HIDEAKI;HAYASHI SHOGO
分类号 G02F1/1368;G03F1/68;G03F7/20;G09F9/30;H01L21/336;H01L29/786;(IPC1-7):G02F1/136;G03F1/08 主分类号 G02F1/1368
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