发明名称 |
Infrared radiation-detecting device |
摘要 |
An AlxGa1-xAs/GaAs/AlxGa1-xAs quantum well exhibiting a bound-to-quasibound intersubband absorptive transition is described. The bound-to-quasibound transition exists when the first excited state has the same energy as the "top" (i.e., the upper-most energy barrier) of the quantum well. The energy barrier for thermionic emission is thus equal to the energy required for intersubband absorption. Increasing the energy barrier in this way reduces dark current. The amount of photocurrent generated by the quantum well is maintained at a high level.
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申请公布号 |
US2003205704(A1) |
申请公布日期 |
2003.11.06 |
申请号 |
US20010825875 |
申请日期 |
2001.04.03 |
申请人 |
CALIFORNIA INSTITUTE OF TECHNOLOGY, A CALIFORNIA CORPORATION |
发明人 |
GUNAPALA SARATH D.;LIU JOHN K.;PARK JIN S.;LIN TRUE-LON;SUNDARAM MANI |
分类号 |
G01J1/02;G01J5/28;H01L27/14;H01L31/0248;H01L31/0352;(IPC1-7):H01L47/02 |
主分类号 |
G01J1/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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