发明名称 MULTILAYER THIN FILM HYDROGEN GETTER
摘要 A thin film hydrogen getter is provided for protecting GaAs circuitry sealed in an hermetic package. The thin film getter which comprises a multilayer metal film which is deposited by vacuum evaporation techniques onto a surface of the packaging. The multilayer film comprises (1) a titanium film and (2) palladium film which is deposited onto the titanium film. Both the titanium and the palladium are deposited during the same coating process run, thereby preventing the titanium from being oxidized. The palladium continues to prevent the titanium from being oxidized once the getter is exposed to the atmosphere. However, hydrogen is easily able to diffuse through the palladium into the titanium where it is chemically bound up, since palladium is highly permeable to hydrogen. If EMI shielding is desired, a conductive metal, such as aluminum or copper, can first be formed between the packaging and the titanium layer.
申请公布号 WO03028096(A3) 申请公布日期 2003.11.06
申请号 WO2002US30763 申请日期 2002.09.26
申请人 RAYTHEON COMPANY 发明人 KOVACS, ALAN, L.;PETER, MATTHEW, H.;KETOLA, KURT, S.;LINDER, JACQUES, F.
分类号 F25B9/02;H01L23/26 主分类号 F25B9/02
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