发明名称 |
METHODS OF CONTROLLING OXYGEN PARTIAL PRESSURE DURING ANNEALING OF A PEROVSKITE DIELECTRIC LAYER |
摘要 |
Oxygen partial pressure may be controlled during annealing of a perovskite dielectric layer by providing an oxygen-absorbing layer adjacent the perovskite dielectric layer, and annealing the perovskite dielectric layer in an ambient that includes an ambient oxygen partial pressure, such that the oxygen-absorbing layer locally reduces the oxygen partial pressure adjacent the perovskite dielectric layer to below the ambient oxygen partial pressure. Thus, a perovskite dielectric layer can be annealed without the need to provide ultra-high vacuum and/or ultra-high purity ambient environments.
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申请公布号 |
US2003207150(A1) |
申请公布日期 |
2003.11.06 |
申请号 |
US20020139454 |
申请日期 |
2002.05.06 |
申请人 |
MARIA JON-PAUL;KINGON ANGUS IAN |
发明人 |
MARIA JON-PAUL;KINGON ANGUS IAN |
分类号 |
B05D3/02;B05D5/12;B32B9/00;B32B15/04;C04B35/491;C04B35/64;H01G4/12;H01L21/316;(IPC1-7):B32B15/04 |
主分类号 |
B05D3/02 |
代理机构 |
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代理人 |
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地址 |
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