METHOD FOR THE COMPARISON OF THE ADDRESS OF A MEMORY ACCESS WITH THE ALREADY KNOWN ADDRESS OF A DEFECTIVE MEMORY CELL

摘要

The invention relates to a method for the comparison of the address of a memory cell with an already known address of a defective memory cell of a semiconductor memory component, divided into banks, with an address structure in which each address is assigned to a bank organised in rows and columns and is fixed by means of a row address, a column address and a bank address. On a memory access the row, column and bank address are determined, whereby a bank is activated by means of a bank selection signal and the access to a valid address for a defective memory cell is displayed by means of an enable register.