发明名称 |
High voltage resistive structure integrated on a semiconductor substrate |
摘要 |
A resistive structure integrated on a semiconductive substrate is described. The resistive structure has a first type of conductivity formed into a serpentine region of conductivity which is opposite to that of the semiconductive substrate. In at least two parallel portions of the serpentine region, there is at least one trench filled with an insulating material.
|
申请公布号 |
US2003205780(A1) |
申请公布日期 |
2003.11.06 |
申请号 |
US20030420386 |
申请日期 |
2003.04.21 |
申请人 |
STMICROELECTRONICS S.R.L. |
发明人 |
LEONARDI SALVATORE |
分类号 |
H01L21/761;H01L21/762;H01L27/08;(IPC1-7):H01L29/00 |
主分类号 |
H01L21/761 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|