发明名称 |
Rad Hard MOSFET with graded body diode junction and reduced on resistance |
摘要 |
A Rad Hard MOSFET has a plurality of closely spaced base strips which have respective source to form invertible surface channels with the opposite sides of each of the stripes. A non-DMOS late gate oxide and overlying conductive polysilicon gate are formed after the source and base regions have been diffused. The base strips are spaced by about 0.6 microns, and the polysilicon gate stripes are about 3.2 microns wide. An enhancement region is implanted through spaced narrow window early in the process and are located in the JFET common conduction region which is later formed by and between the spaced base stripes. The device is a high voltage (greater than 25 volts) device with very low gate capacitance and very low on resistance. An early and deep (1.6 micron) P channel implant and diffusion are formed before the main channel is formed to produce a graded body diode junction.
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申请公布号 |
US2003205829(A1) |
申请公布日期 |
2003.11.06 |
申请号 |
US20020138164 |
申请日期 |
2002.05.01 |
申请人 |
INTERNATIONAL RECTIFIER CORP. |
发明人 |
BODEN MILTON J. |
分类号 |
H01L21/336;H01L29/08;H01L29/10;H01L29/739;H01L29/78;(IPC1-7):H01L29/76;H01L29/94;H01L31/062;H01L31/113;H01L31/119 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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