LIGHT-EMITTING GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR DEVICE WITH DOUBLE HETEROSTRUCTURE

摘要

PURPOSE: A light-emitting gallium nitride-based compound semiconductor device with a double heterostructure is provided to improve light emitting efficiency and fabricate a light emitting device of generating ultraviolet or red light having a wavelength range of 360-620 nanometer. CONSTITUTION: The first clad layer(16) is made of n-type Ga1-aAlaN(0<=a<1). A light emitting layer(18) contains Zn with an impurity density of 1x1017 - 5x 1021/centimeter¬3 and is formed of an n-type InxGa1-xN(0<x<0.5) with a thickness of 10-0.5 micrometer, formed on the first clad layer. The second clad layer(20) is formed of a p-type Ga1-bAlbN(0<=b<1) containing Mg as a p-type impurity with a density range of 1x1018 - 5x1021/centimeter¬3, formed on the light emitting layer. A semiconductor stacked structure is composed of the first clad layer, the light emitting layer and the second clad layer. The semiconductor stacked structure is formed over the substrate(12) through a buffer layer(14).