发明名称 |
Nonvolatile semiconductor memory device |
摘要 |
A memory cell array has a first and a second storage area. The first storage area has a plurality of memory elements selected by an address signal. The second storage area has a plurality of memory elements selected by a control signal. A control circuit has a fuse element. When the fuse element has been blown, the control circuit inhibits at least one of writing and erasing from being done on the second storage area.
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申请公布号 |
US2003206438(A1) |
申请公布日期 |
2003.11.06 |
申请号 |
US20030442995 |
申请日期 |
2003.05.22 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
SHIBATA NOBORU;TANAKA TOMOHARU |
分类号 |
G06F12/16;G11C7/00;G11C11/56;G11C16/02;G11C16/04;G11C16/06;G11C16/08;G11C16/10;G11C16/22;G11C16/34;G11C29/00;G11C29/04;G11C29/06;G11C29/42;(IPC1-7):G11C16/06 |
主分类号 |
G06F12/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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