MEMBER FOR SEMICONDUCTOR MANUFACTURING SYSTEM AND ITS MANUFACTURING METHOD

摘要

A technique of forming a composite oxide coating film excellent in metal-contamination resistance and corrosion resistance to, e.g., hydrofluoric acid and hydrochloric acid on the surface of a member for a semiconductor manufacturing system. A slurry of silicon oxide-aluminum oxide-chromium oxide and a sintering aid for producing an amorphous inorganic substance by sintering is applied to the surface of the base, and the base is heated and baked at 250-750°C to form a composite oxide coating film and to form a deposite layer of amorphous inorganice particles by using a chromium oxide aqueous solution containing a sintering assistant