发明名称 |
DOWNWARD METAL FILM DEPOSITION APPARATUS AND METHOD FOR MANUFACTURING ORGANIC SEMICONDUCTOR |
摘要 |
PURPOSE: A downward metal film deposition apparatus and a method for manufacturing organic semiconductor are provided to be capable of preventing thermal damage from being generated at an organic layer and improving the uniformity of a deposition layer. CONSTITUTION: A downward metal film deposition apparatus is provided with a scan head part(10) connected to a power supply(90), a metal supply part for continuously supplying metal to a resistance heating source of the scan head part, a scan head spin part for rotating the resistance heating source, and a quartz oscillator(40) installed at the lower portion of the scan head part for controlling the deposition speed of vapor. The downward metal film deposition apparatus further includes a driving part(50) for moving the scan head part, a shutter part(60) for restraining the increase of substrate temperature, and a substrate cooling and heating part(70) for conserving the substrate temperature to a predetermined point.
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申请公布号 |
KR100406203(B1) |
申请公布日期 |
2003.11.06 |
申请号 |
KR20030042810 |
申请日期 |
2003.06.27 |
申请人 |
ANS INC. |
发明人 |
KIM, DONG SOO;LEE, JOO HYEON;KANG, CHUL GU;KIM, CHANG WOO |
分类号 |
H01L21/20;(IPC1-7):H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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