摘要 |
PURPOSE: A low resistance metal electrode structure of a silicon germanium semiconductor substrate and a method for manufacturing the same are provided to be capable of reducing contact resistance without forming a silicon capping layer. CONSTITUTION: A low resistance metal electrode structure of a silicon germanium semiconductor substrate is provided with a silicon substrate(200), a silicon seed layer(202) formed on the silicon substrate, a silicon germanium layer(204) formed at the upper portion of the silicon seed layer, and a metal electrode layer(206) formed on the silicon germanium layer. At this time, the metal electrode layer is formed into a sequential stack structure of a Ni layer, a Sb layer formed on the Ni layer, and an Au layer formed on the Sb layer. Preferably, the Au layer has a thickness of 100-500 angstrom.
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