发明名称 LOW RESISTANCE METAL ELECTRODE STRUCTURE OF SILICON GERMANIUM SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME
摘要 PURPOSE: A low resistance metal electrode structure of a silicon germanium semiconductor substrate and a method for manufacturing the same are provided to be capable of reducing contact resistance without forming a silicon capping layer. CONSTITUTION: A low resistance metal electrode structure of a silicon germanium semiconductor substrate is provided with a silicon substrate(200), a silicon seed layer(202) formed on the silicon substrate, a silicon germanium layer(204) formed at the upper portion of the silicon seed layer, and a metal electrode layer(206) formed on the silicon germanium layer. At this time, the metal electrode layer is formed into a sequential stack structure of a Ni layer, a Sb layer formed on the Ni layer, and an Au layer formed on the Sb layer. Preferably, the Au layer has a thickness of 100-500 angstrom.
申请公布号 KR20030085153(A) 申请公布日期 2003.11.05
申请号 KR20020023310 申请日期 2002.04.29
申请人 POSTECH FOUNDATION 发明人 JANG, HO WON;KIM, I GON;LEE, JONG RAM
分类号 H01L21/28;(IPC1-7):H01L21/28 主分类号 H01L21/28
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