| 摘要 |
PURPOSE: To enlarge a process margin at the time of formation of the contact in a manufacturing process for a semiconductor device which is refined. CONSTITUTION: When a gate electrode 106 is formed, patterns 105 and 107 are formed at the same time. And, anode oxide films 108-110 are farmed on the surface of them. Further, an interlayer insulation film 113 is formed, and a contact hole 114 is formed. At this time, even when the contact hole 114 gets out of position, there is an aluminum pattern, in which the anode oxide films 108 and 109 are formed, on its surface, so that failure due to dislocation is prevented.
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