发明名称 |
Method for repairing over-erasure of fast bits on floating gate memory devices |
摘要 |
A method for repairing over-erasure of floating gate memory devices. Specifically, one embodiment of the present invention discloses a method for performing a program disturb operation on an array of memory cells for repairing over-erasure of fast bits. The program disturb operation is applied simultaneously to the entire array making it compatible with channel erase schemes. The fast bits are programmed back to a normal state above 0 Volts by applying a substrate voltage to a substrate common to the array of memory cells. A gate voltage is applied to a plurality of word lines coupled to control gates of said array of memory cells. A program pulse time for applying voltages ranges from approximately 10 microseconds to 1 second. A voltage differential between a control gate and the substrate in a memory cell is in the range of approximately 9 Volts to about 20 Volts.
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申请公布号 |
US6643185(B1) |
申请公布日期 |
2003.11.04 |
申请号 |
US20020215140 |
申请日期 |
2002.08.07 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
WANG ZHIGANG;YANG NIAN;LI JIANG |
分类号 |
G11C16/34;(IPC1-7):G11C16/04 |
主分类号 |
G11C16/34 |
代理机构 |
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主权项 |
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地址 |
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