| 摘要 |
A redundant memory circuit for use in an analog semiconductor memory has a cell array divided into sectors. To replace bad sectors, the cell array may include a pair of redundant sectors disposed at opposite ends of the cell array, or may have a centrally located redundant sector. Alternatively, the redundant memory circuit may have a sector selection circuit that selects the sectors and redundant sector in sequence from one end of the cell array to the other, or may have a word line selector located in the center of the cell array, or may have two cell arrays and a redundant sector selection circuit that enables a bad sector in one cell array to be replaced by a redundant sector in either of the two cell arrays. These arrangements improve the capability for redundancy replacement and the quality of the reproduced analog signal.
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