Semiconductor device with capacitor structure having hydrogen barrier layer and method for the manufacture thereof

摘要

A semiconductor device for use in a memory cell including an active matrix provided with a transistor and a first insulating layer formed around the transistor; a capacitor structure, formed on top of the first insulating layer and composed of a bottom electrode, a capacitor thin film placed on top of the bottom electrode and a top electrode formed on top of the capacitor thin film; a second insulating layer formed on top of the transistor and the capacitor structure; a metal interconnection formed on top of the second insulating layer and the active matrix to electrically connect the transistor to the capacitor structure; and a hydrogen barrier layer formed on top of the metal interconnection, wherein the hydrogen barrier layer is made of an aluminum oxide (AlxOy) layer.