| 摘要 |
PURPOSE: A housing structure for an ultrasonic generation cleaning device is provided to keep a clean room in a semiconductor assembly plant clean by radiating heat of a field effect transistor formed in the cleaning device by natural convection. CONSTITUTION: A plurality of upper side radiating fins(22) are integrally formed at both side walls of a box-shaped body, and radiate heat of a field effect transistor. An upper radiating plate(20) covers the top of the body, and is integrated with a plurality of upper radiating fins(24). A plurality of lower side radiating fins(32) are integrally formed at both side walls of the body, and radiates heat of the field effect transistor. A lower radiating plate(30) covers the bottom of the body, and is integrated with a plurality of lower radiating fins(34). A plurality of legs(40) are installed at the bottom of the lower radiating plate.
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