| 摘要 |
PURPOSE: A method for fabricating a metal electrode of a semiconductor device by an atomic layer deposition(ALD) method is provided to improve reliability and yield by forming a pure metal electrode without impurities and by preventing a problem caused by particles. CONSTITUTION: An MX2 or MX4(M is a centric atom of Ni, Pd or Pt and X is a ligand) precursor material is supplied to a reaction chamber to absorb the metal precursor material to the surface of a substrate. The reaction chamber is firstly purged. Reaction gas is supplied to the reaction chamber to react with the metal precursor material absorbed to the surface of the substrate so that the concentric atoms without the ligand are formed on the substrate. The reaction chamber is secondly purged. The abovementioned processes are repeated.
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