| 摘要 |
PURPOSE: A silicon TFT(Thin Film Transistor) array formed at an X-ray photosensitive substrate is provided to be capable of increasing the temperature range for depositing a thin film and electric capacity without the increase of the surface area of a pixel electrode. CONSTITUTION: A silicon TFT array formed at an X-ray photosensitive substrate is provided with a substrate(10), a common metal electrode(11) formed on the substrate, an X-ray photosensitive material layer(9) formed on the common metal electrode, a pixel electrode(8) formed at the first predetermined upper portion of the X-ray photosensitive material layer, a substrate isolating layer(7) formed at the second predetermined upper portion of the X-ray photosensitive material layer, a gate electrode(6) formed on the substrate isolating layer, an amorphous silicon layer(4) formed at the upper portion of the gate electrode, and the second electrode(1) formed at the upper portion of the resultant structure for storing electric charges. At this time, the pixel electrode and the gate electrode are used as a storage capacitor.
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