| 摘要 |
The subject of the present invention is to eliminate the variance of production dimensions for each wafer in the process on the wafer using plasma without reduction of productivity, and processing on wafer with excellent repetition. The solution is to produce the plasma in a vacuum chamber 20, and apply high frequency voltage on the lower electrode configured with wafers; periodically switching and modulating the high frequency voltage applied on the lower electrode 27; and, controlling the loading ratio of the switching for the high frequency voltage on each processed wafer or each of plurality of wafers, so as to process the wafer 32 by plasma.
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