| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device wherein the film thickness of a silicon active layer can be controlled with high precision, and to provide its manufacturing method. SOLUTION: This semiconductor device is provided with: a first gate electrode 12 arranged in the surface region of an insulating film 11; a first gate insulating film 13 arranged on the first gate electrode 12; a semiconductor layer 15 arranged on the insulating film 11 and the first gate insulating film 13; source drain regions 16, 16 which are arranged at least in the surface region of the semiconductor layer 15 isolated from each other; source drain electrodes 25, 25 which are arranged on the source drain regions 16, 16, respectively, in such a manner that positions of sidewall surfaces facing each other practically coincide in a direction perpendicular to the surface of the insulating film 11 with positions of both sidewall surfaces of the first gate electrode 12; a second gate insulating film 17 arranged on the semiconductor layer 15 positioned between the source drain regions 16, 16; and a second gate electrode 18 which is arranged on the second gate insulating film 17 and electrically isolated from the source drain electrodes 25, 25. COPYRIGHT: (C)2004,JPO
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