| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem that breakdown voltage inferiority (leak) and the irregularity of characteristics caused by particles are observed on a film formed by a PCVD method because a few kinds of radicals exist when high frequency electric power is applied on SiH<SB>4</SB>or the like by first gas containing silicon, some radicals with short lives exist therein, and these become nuclei to generate the particles. SOLUTION: The high frequency electric power is applied on SiH<SB>4</SB>which is the first gas containing silicon and N<SB>2</SB>O, NH<SB>3</SB>, N<SB>2</SB>, H<SB>2</SB>, Ar or the like which is second gas not containing silicon, and a thin film is formed. Then, the supply of SiH<SB>4</SB>or the like which is the first gas containing silicon is stopped while the high frequency electric power is applied continuously, and the high frequency electric power is applied on only N<SB>2</SB>O, NH<SB>3</SB>, N<SB>2</SB>, H<SB>2</SB>, Ar or the like which is the second gas not containing silicon to discharge the particles existing in a reaction chamber. COPYRIGHT: (C)2004,JPO
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