| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device which is reduced in the number of manufacturing processes and is also reduced in cost. <P>SOLUTION: A method of manufacturing a semiconductor device comprises steps of: forming a metal pad 2 on a silicon wafer (Si substrate 1) via an insulation film 3, and then forming a metal post (Cu 7) for electrode connection on the metal pad 2; pasting the Si substrate 1 and a support board 11 for supporting the Si substrate together via an insulation film 10; polishing the rear face of the Si substrate 1; forming openings 14a penetrating from the rear face of the Si substrate 1 to the Cu 7; forming an insulation film 15 on sidewalls of the openings 14a, and then forming a metal film (TiN 16 and Cu 17) in the openings; forming an electrode (solder ball 19) on the TiN 16 and Cu 17; dicing the Si substrate 1 from the rear face thereof to the film 10; and separating the Si substrate 1 from the support board 11. <P>COPYRIGHT: (C)2004,JPO</p> |
